NTE385
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
switch mode applications.
Features:
D
Fast Turn鈥揙ff Times
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector鈥揈mitter Voltage (V
BE
= 鈥?.5V), V
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Base Current, I
B
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/擄C
Total Power Dissipation (T
C
= +100擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0擄C/W
Lead Temperature (During Soldering, 1/8鈥?from case, 5sec), T
L
. . . . . . . . . . . . . . . . . . . . . . . +275擄C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
鈮?/div>
10%.
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
(Note 2)
Collector鈥揈mitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, L = 25mH
I
CEX
I
CER
Emitter Cutoff Current
Emitter鈥揃ase Breakdown Voltage
I
EBO
V
(BR)EBO
V
CEX
= 850V, V
BE(off)
= 1.5V
V
CEV
= 850V, V
BE(off)
= 1.5V, T
C
= +125擄C
V
CE
= 850V, R
BE
= 10鈩?/div>
V
CE
= 850V, R
BE
= 10鈩? T
C
= +100擄C
V
BE
= 5V, I
C
= 0
I
E
= 50mA, 鈥揑
C
= 0
400
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
7
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
2.0
0.5
3.0
0.1
鈥?/div>
V
mA
mA
mA
mA
mA
V
Symbol
Test Conditions
Min
Typ
Max Unit
Note 2. Pulse test: Pulse Width = 300碌s, Duty Cycle
鈮?/div>
2%, V
cl
= 300V, V
BE(off)
= 5V, L
C
= 180碌H.
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