NTE384
Silicon NPN Transistor
High Voltage Power Amp/Switch
Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple鈥揺mitter site structure. Multiple鈥揺pitaxial construction maximizes the volt鈥揳mpere character-
istic of the device and provides fast switching speeds. Multiple鈥揺mitter design ensures uniform cur-
rent flow throughout the structure, which produces a high I
S/b
and a large safe鈥搊peration鈥揳rea.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The V
EBO
rating of 9V eases requirements on the drive transformer in
inverter applications.
Features:
D
Maximum Safe鈥揂rea鈥搊f鈥揙peration
D
Low Saturation Voltages
D
High Voltage Rating: V
CER(sus)
= 375V
D
High Dissipation Rating: P
T
= 45W
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V
Collector鈥揈mitter Sustaining Voltage
With Base Open, V
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
With Reverse Bias (V
BE
) of 鈥?.5V, V
CEX(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V
With External Base鈥揈mitter Resistance (R
BE
)
鈮?/div>
50鈩? V
CER(sus)
. . . . . . . . . . . . . . . . . . . 375V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Transistor Dissipation (T
C
鈮?/div>
+25擄C, V
CE
鈮?/div>
40V), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), T
L
. . . . . . . +230擄C
Thermal Resistance, Junction to Case (V
CE
= 20V, I
C
= 2.25A), R
螛JC
. . . . . . . . . . . . . . . . . 3.9擄C/W
1
2
