NTE366
Silicon NPN Transistor
RF Power Output
P
O
= 25W @ 512MHz
Description:
The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large鈥搒ignal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D
Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 25 Watts
Minimum Gain = 6.2dB
Efficiency = 60%
D
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
D
Built鈥揑n Matching Network for Broadband Operation
D
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16鈥搗olt High Line
and Overdrive
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current鈥揅ontinuous, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
I
CES
I
C
= 20mA, I
B
= 0
I
C
= 20mA, V
BE
= 0
I
E
= 5mA, I
C
= 0
V
CE
= 15V, V
BE
= 0, T
C
= +25擄C
16
36
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max Unit
next
NTE366相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors TV Sound Output, TV Vertic...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 160V; Transistor Polarity:NPN; Coll...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -160V; Transistor Polarity:PNP; Col...
NTE Electronics
-
英文版
Silicon Complementary Transistors AF Power Amplifier, High C...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 140V TO-3P; Transistor Polarity:NPN...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -140V, TO-3P; Transistor Polarity:P...
NTE Electronics
-
英文版
Silicon Complementary Transistors High Voltage, Medium Power...
NTE
-
英文版
Silicon PNP Transistor Line-Operated Series Pass/Switching R...
NTE
-
英文版
Transistor; PNP; 300 V; 3 V; 500 mA (Continuous); 20 W @ Tc ...
NTE Electronics
-
英文版
Silicon Complementary Transistors Audio Power Amplifier
NTE
-
英文版
Thermal Compound; 1 Gram/5 Tubes; White; Base Silicon Oil; F...
NTE Electronics
-
英文版
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflectio...
NTE
-
英文版
Integrted Circuit Voltage Regulator
NTE
-
英文版
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflectio...
NTE
-
英文版
Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF
NTE
-
英文版
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Em...
NTE Electronics
-
英文版
N-Channel Silicon Junction Field Effect Transistor
NTE
-
英文版
JFET-N-CH VHF AMP/MIX JFET-N-CH, VHF AMP/MIX NTE Field Effec...
NTE Electronics
-
英文版
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and V...
NTE
-
英文版
Silicon Controlled Rectifier (SCR) Power Regulator Switch
NTE