NTE363
Silicon NPN Transistor
RF Power Amp, P
O
= 4W
Description:
The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF commu-
nications.
Features:
D
Designed for UHF Military and Commercial Equipment
D
4W (Min) with Greater than 8dB Gain
D
Withstands Infinite VSWR Under Operating Conditions
D
Low Inductance Stripline Package
D
Emitter Stabilized
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (T
C
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6擄C/W
Electrical Characteristics:
Parameter
Collector鈥揈miter Breakdown Voltage
Symbol
Test Conditions
Min
16
36
4
鈥?/div>
20
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
1.0
鈥?/div>
Unit
V
V
V
mA
V
(BR)CEO
I
C
= 100mA, I
B
= 0, Note 1
V
(BR)CES
I
C
= 100mA, I
BE
= 0, Note 1
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
DC Current Gain
V
(BR)EBO
I
E
= 2mA, I
C
= 0
I
CBO
h
FE
V
CB
= 5V, I
E
= 0
V
CE
= 5V, I
C
= 200mA
Note 1. Pulsed throught 25MH inductor.
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