NTE361
Silicon NPN Transistor
RF Power Output
P
O
= 2W @ 512MHz
Description:
The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large鈥搒ignal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D
Specified 12.5 Volt, 470MHz Characteristics:
Output Power = 2.0 Watts
Minimum Gain = 8.0dB
Efficiency = 50%
D
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
D
Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation
D
Replaces Medium鈥揚ower Stud Mounted Devices
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current鈥揅ontinuous, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation @ T
C
= 25擄C, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
I
CBO
I
C
= 50mA, I
B
= 0
I
C
= 50mA, V
BE
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 15V, I
E
= 0
16
36
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max Unit
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