NTE352
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V
VHF large鈥搒ignal power amplifier applications required in commercial and industrial FM equipment
to 175MHz.
Features:
D
Specified 12.5V, 175MHz Characteristics:
Output Power = 75W
Minimum Gain = 7.0dB
Efficiency = 55%
D
Characterized with Series Equivalent large鈥揝ignal Impedance Parameters
D
Internal Matching Network Optimized for Minimum Gain Frequency Slope Response over the
Range 136 to 175MHz
D
Load Mismatch capability at Rated P
OUT
and Supply Voltage
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current (Peak), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (Note 1, T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resuistance, Junction鈥搕o鈥揅ase (Note 2), R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7擄C/W
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Note 2. Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
I
C
= 100mA, I
B
= 0
V
(BR)CES
I
C
= 50mA, V
BE
= 0
Emitter鈥揃ase Breakdown Voltage
ON Characteristics
DC Current Gain
h
FE
I
C
= 5A, V
CE
= 5V
10
75
150
V
(BR)EBO
I
E
= 10mA, I
C
= 0
18
36
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
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