NTE349
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
VHF large鈥搒ignal amplifier applications required in military and industrial equipment to 240MHz.
Features:
D
Specified 13.6V, 175MHz Characteristics:
Output Power = 10W
Minimum Gain = 5.2dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0171mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
ON Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 0.1 to 1MHz
鈥?/div>
35
70
pF
h
FE
I
C
= 250mA, V
CE
= 5V
5
鈥?/div>
鈥?/div>
V
(BR)CEO
I
C
= 200mA, I
B
= 0
V
(BR)EBO
I
E
= 2.5mA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
18
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
V
V
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
NTE349相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors TV Sound Output, TV Vertic...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 160V; Transistor Polarity:NPN; Coll...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -160V; Transistor Polarity:PNP; Col...
NTE Electronics
-
英文版
Silicon Complementary Transistors AF Power Amplifier, High C...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 140V TO-3P; Transistor Polarity:NPN...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -140V, TO-3P; Transistor Polarity:P...
NTE Electronics
-
英文版
Silicon Complementary Transistors High Voltage, Medium Power...
NTE
-
英文版
Silicon PNP Transistor Line-Operated Series Pass/Switching R...
NTE
-
英文版
Transistor; PNP; 300 V; 3 V; 500 mA (Continuous); 20 W @ Tc ...
NTE Electronics
-
英文版
Silicon Complementary Transistors Audio Power Amplifier
NTE
-
英文版
Thermal Compound; 1 Gram/5 Tubes; White; Base Silicon Oil; F...
NTE Electronics
-
英文版
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflectio...
NTE
-
英文版
Integrted Circuit Voltage Regulator
NTE
-
英文版
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflectio...
NTE
-
英文版
Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF
NTE
-
英文版
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Em...
NTE Electronics
-
英文版
N-Channel Silicon Junction Field Effect Transistor
NTE
-
英文版
JFET-N-CH VHF AMP/MIX JFET-N-CH, VHF AMP/MIX NTE Field Effec...
NTE Electronics
-
英文版
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and V...
NTE
-
英文版
Silicon Controlled Rectifier (SCR) Power Regulator Switch
NTE
1
2
