NTE348
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large鈥搒ignal power amplifier applications required in military and industrial equipment to
300MHz.
Features:
D
Specified 12.5V, 175MHz Characteristics:
Output Power = 4W
Minimum Gain = 12dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (Note 1, T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.5mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
V
(BR)CES
I
C
= 5mA, V
BE
= 0
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
I
E
= 1mA, I
C
= 0
I
CBO
I
CES
ON Characteristics
DC Current Gain
h
FE
I
C
= 250mA, V
CE
= 5V
5
鈥?/div>
鈥?/div>
V
CB
= 15V, I
E
= 0
V
CE
= 15V, V
BE
= 0, T
C
= +55擄C
18
36
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.25
5
V
V
V
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
NTE348 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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