NTE340
Silicon NPN Transistor
RF Power Output, High Frequency
Features:
D
High Transition Frequency
D
Output of 0.6W can be obtained in the VHF Band (f = 175MHz).
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Peak Collector Voltage, I
CP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
High鈥揊requency Output
Overall Efficiency
Symbol
I
CBO
h
FE
f
T
C
ob
P
O
畏
Test Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 13.5V, I
C
= 100mA
V
CB
= 10V, I
E
= 鈥?00mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CC
= 13.5V, P
I
= 0.03W, f = 175MHz
V
CC
= 13.5V, P
I
= 0.03W, f = 175MHz
Min
鈥?/div>
20
1.5
鈥?/div>
0.6
鈥?/div>
Typ
鈥?/div>
50
2
4
0.9
60
Max
10
NTE340 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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