NTE3302
Insulated Gate Bipolar Transistor
N鈥揅hannel Enhancement Mode,
High Speed Switch
Features:
D
High Input Impedance
D
High Speed
D
Low Saturation Voltage
D
Enhancement Mode
Applications:
D
High Power Switching
D
Motor Control
Absolute Maximum Raings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate鈥揈mitter Voltage, V
GES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵20V
Collector Current, I
C
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Collector Power Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Gate Leakage Current
Collector Cutoff Current
Collector鈥揈mitter Breakdown Voltage
Gate鈥揈mitter Cutoff Voltage
Collector鈥揈mitter Saturation Voltage
Input Capacitance
Rise Time
Turn鈥揙n Time
Fall Time
Turn鈥揙ff Time
Symbol
I
GES
I
CES
V
GE(off)
V
CE(sat)
C
ies
t
r
t
on
t
f
t
off
Test Conditions
V
GE
=
鹵20V,
V
CE
= 0
V
CE
= 600V, V
GE
= 0
I
C
= 8mA, V
CE
= 5V
I
C
= 8A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V
Min
鈥?/div>
鈥?/div>
600
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.0
650
0.3
0.4
0.15
0.5
Max
鹵500
1.0
鈥?/div>
6.0
4.0
鈥?/div>
0.6
0.8
0.35
1.0
Unit
nA
mA
V
V
V
pF
碌s
碌s
碌s
碌s
V
(BR)CES
I
C
= 2mA, V
GE
= 0
NTE3302 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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