NTE3301
Insulated Gate Bipolar Transistor
N鈥揅hannel Enhancement Mode,
High Speed Switch
Features:
D
High Input Impedance
D
Low Saturation Voltage
D
Enhancement Mode
D
20V Gate Drive
Applications:
D
High Power Switching
D
Motor Control
Absolute Maximum Raings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate鈥揈mitter Voltage, V
GES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵25V
Collector Current, I
C
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170A
Collector Power Dissipation, P
C
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12擄C/W
Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6N鈥
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Gate Leakage Current
Collector Cutoff Current
Collector鈥揈mitter Breakdown Voltage
Gate鈥揈mitter Cutoff Voltage
Collector鈥揈mitter Saturation Voltage
Input Capacitance
Rise Time
Turn鈥揙n Time
Fall Time
Turn鈥揙ff Time
Symbol
I
GES
I
CES
V
GE(off)
V
CE(sat)
C
ies
t
r
t
on
t
f
t
off
Test Conditions
V
GE
=
鹵25V,
V
CE
= 0
V
CE
= 400V, V
GE
= 0
I
C
= 1mA, V
CE
= 5V
I
C
= 170A, V
GE
= 20V (Pulsed)
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V
Min
鈥?/div>
鈥?/div>
400
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
5.0
5.0
2000
0.1
0.15
4.0
4.5
Max
鹵100
1.0
鈥?/div>
7.0
8.0
鈥?/div>
0.5
0.50
6.0
7.0
Unit
nA
碌A(chǔ)
V
V
V
pF
碌s
碌s
碌s
碌s
V
(BR)CES
I
C
= 2mA, V
GE
= 0
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