NTE323 (PNP) & NTE324 (NPN)
Silicon Complementary Transistors
General Purpose
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage (I
E
= 0), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter鈥揃ase Voltage (I
C
= 0), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation, P
tot
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CEO
I
CEV
Test Conditions
V
CB
= 120V, I
E
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 120V, V
BE
= 鈥?.5V
V
CE
= 120V, V
BE
= 鈥?.5V, T
C
= +150擄C
V
EB
= 4V, I
C
= 0
I
C
= 250mA, I
B
= 25mA, Note 1
I
C
= 500mA, I
B
= 50mA, Note 1
I
C
= 1A, I
B
= 200mA, Note 1
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
120
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max Unit
1
10
1
1
1
鈥?/div>
0.6
1.0
2.0
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mA
碌A(chǔ)
V
V
V
V
Emitter Cutoff Current
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Saturation Voltage
I
EBO
V
CE(sat)
V
CEO(sus)
I
C
= 10mA, I
B
= 0, Note 1
Note 1. Pulse Duration = 300碌s, Duty Cycle
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