NTE317
Silicon NPN Transistor
RF Power Output
Description:
The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under severe
operating conditions.
Features:
D
70W Minimum with Greater than 13.5dB Gain
D
Withstands Severe Mismatch under Operating Conditions
D
Emitter Ballasted
D
Low Inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation (+25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220W
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8擄C/W
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
18
36
4
鈥?/div>
10
200
鈥?/div>
70
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
300
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
3
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
MHz
pF
W
dB
Unit
V
V
V
mA
Collector鈥揈mitter Breakdown Voltage V
(BR)CEO
I
C
= 50mA, I
B
= 0, Note 1
Collector鈥揈mitter Breakdown Voltage V
(BR)CES
I
C
= 20mA, V
BE
= 0, Note 1
Emitter鈥揃ase Breakdown Voltage
Collector Cut鈥揙ff Current
DC Current Gain
Gain Bandwidth
Output Capacitance
Amplifier Power Out
Amplifier Power Gain
V
(BR)EBO
I
E
= 5mA, I
C
= 0
I
CBO
h
FE
f
t
C
ob
P
O
P
g
V
CB
= 15V, I
E
= 0
V
CE
= 5V, I
C
= 5A
V
CE
= 13.5V, I
C
= 100mA
V
CB
= 12.5V, I
C
= 0,
鈥揊
O
= 1.0MHz
30MHz/12.5V
13.5 14.2
Note 1. Pulsed through 25mH Inductor
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