NTE315
Silicon NPN Transistor,
Medium Power Amp
Features:
D
AF 鈥?HF Medium Power Amplifier
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥搕o鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector鈥搕o鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter鈥搕o鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current. I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +120擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Base to Emitter Voltage
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
DC Current Gain
Symbol
I
CBO
I
EBO
V
BE
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
Small Signal Current Gain
Collector Output Capacitance
|h
fe
|
C
C
Test Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 6V, I
C
= 5mA
I
C
= 1A, I
B
= 50mA
I
C
= 1A, I
B
= 50mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 1V, I
C
= 1A
V
CB
= 2V, I
E
= 鈥?0mA,
f = 10MH
Z
V
CB
= 10V, I
E
= 0, f = 1MH
Z
Min
鈥?/div>
鈥?/div>
鈥?/div>
50
鈥?/div>
鈥?/div>
199
70
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
18
16
Max
0.2
0.2
0.7
鈥?/div>
0.3
1.0
649
鈥?/div>
鈥?/div>
40
dB
pf
Unit
碌A
碌A
V
V
V
V
V
CEO(sus)
I
C
= 2mA
NTE315 產(chǎn)品屬性
NTE
置換半導體
否
1
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