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NTE314 Datasheet

  • NTE314

  • Silicon Controlled Rectifier (SCR) Power Regulator Switch

  • 27.92KB

  • 2頁

  • NTE

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NTE314
Silicon Controlled Rectifier (SCR)
Power Regulator Switch
Description:
The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere
RMS, 400 Volt power supply and computer control applications to +100擄C maximum junction.
Features:
D
Low Forward 鈥淥N鈥?Voltage
D
All Diffused Junctions for Greater Parameter Uniformity
D
Glass Passivated for Greater Stability
Absolute Maximum Ratings:
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
DRM
, V
RRM
. . . . . . . . . . . . 400V
RMS Forward Current (T
C
= +80擄C, All Conduction Angles), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . 12.5A
Peak Forward Surge Current (1/2 Cycle Sine Wave, 60Hz, T
J
= 鈥?0擄 to +100擄C), I
TSM
. . . . . 200A
Fusing Current (T
J
= 鈥?0擄 to +100擄C, t = 1 to 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170A
2
s
Forward Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Forward Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Forward Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Forward Gate Voltage, V
GF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V
Peak Reverse Gate Voltage, V
GR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7擄C/W
Note 1. V
DRM
and V
RRM
can be applied on a continuous DC basis without incurrent damage. Ratings
apply for zero or negative gate voltage. Devices should not be tested for blocking capability
in a manner such that the voltage supplied exceeds the rated blocking voltage.
Electrical Characteristics:
(V
D
= 400V, T
C
= +25擄C unless otherwise specified)
Parameter
Peak Forward Blocking Current
Symbol
I
DRM
I
RRM
Test Conditions
T
J
= +100擄C
T
J
= +25擄C
Peak Reverse Blocking Current
T
J
= +100擄C
T
J
= +25擄C
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
3
10
1.5
10
Unit
mA
碌A(chǔ)
mA
碌A(chǔ)

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