NTE313
Silicon NPN Transistor
High Gain, Low Noise,
VHF Mixer and VHF/RF Amp
Description:
The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier
applications. This device features high power gain, low noise, and excellent forward AGC characteristics.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Total Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Maximum Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Current鈥揋ain Bandwidth Product
Output Capacitance
Noise Figure
Power Gain
AGC Current
Symbol
I
CBO
h
FE
f
T
C
ob
NF
PG
I
AGC
Test Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 0, f = 1MHz
I
E
= 鈥?mA, f = 200MHz
I
E
= 鈥?mA, f = 200MHz
PG = 鈥?0dB
Min
鈥?/div>
20
400
鈥?/div>
鈥?/div>
20
鈥?/div>
Typ
鈥?/div>
60
530
0.5
2.5
23
鈥?
Max
0.2
200
鈥?/div>
1.0
3.3
鈥?/div>
鈥?1
MHz
pF
dB
dB
mA
Unit
碌A(chǔ)
NTE313 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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