NTE3123
Phototransistor
Silicon NPN, Intermediate Acceptance,
High Sensitivity, Darlington
Features:
D
Epoxy Resin Package
D
Compact
D
Intermediate Acceptance:
鈭唓
=
鹵40擄
Typ
D
Visible Light Cut鈥揙ff
Applications:
D
VCRs
D
Optoelectronic Switches
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter鈥揅ollector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Disspation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +85擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +85擄C
Lead Temperature, T
L
During Soldering, 1.4mm from surface of resin edge, 3sec . . . . . . . . . . . . . . . . . . . . . . +260擄C
Electrical Characteristics:
Parameter
Collector Current
Collector Dark Current
Symbol
I
C
I
CBO
Test Conditions
V
CE
= 2V, E
v
= 2 x, Note 1
V
CE
= 10V, E
e
= 0
Min
0.2
鈥?/div>
鈥?/div>
鈥?/div>
V
CE
= 2V, I
C
= 5mA, R
L
= 100鈩?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
0.4
鈥?/div>
鈥?/div>
860
400
300
鹵40
Max
0.8
10
鈥?
1.0
鈥?/div>
2000
1500
鈥?/div>
Unit
mA
A
V
nm
碌s
碌s
deg.
Collector鈥揈mitter Saturation Voltage V
CE(sat)
I
C
= 0.8mA, E
e
= 1mW/cm
2
,
Note 1
Peak Emission Wavelength
Response Time (Rise)
Response Time (Fall)
Half Intensity Angle
位
P
t
r
t
f
鈭唓
Note 1. E
e
, E
v
: Illuminance, irradiance by CIE standard light source A (tungsten lamp).
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