NTE3120
Silicon NPN Phototransistor Detector
Features:
D
High Sensitivity
D
GaAs LED鈥揥ide Spectral Range, with GaAs LED.
D
Low Dark Current
D
Side鈥揤iew Plastic Package
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揅ollector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Collector Dissipation P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +85擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Electro鈥揙ptical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Dark Current
Photo Current
Peak Sensitivity Wavelength
Acceptance Half Angle
Rise Time
Fall Time
Collector鈥揈mitter Saturation Voltage
Symbol
I
CEO
I
CE(L)
位
P
q
t
r
t
f
Test Conditions
V
CE
= 10V
V
CE
= 10V, L = 500 1x, Note 1
V
CE
= 10V
Note 2
V
CC
= 10V, I
CE(L)
= 5mA,
R
L
= 100鈩?/div>
鈩?/div>
Min Typ Max Unit
鈥?/div>
1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.01 1.0
3
800
35
4
4
0.2
鈥?/div>
鈥?/div>
鈥?/div>
10
10
0.5
碌A(chǔ)
mA
nm
deg
碌s
碌s
V
V
CE(sat)
I
CE(L)
= 1mA, L = 1000 1x, Note 1
Note 1. Source: Tungsten 2856
擄K.
Note 2. The angle when the light current is halved.
NTE3120 產(chǎn)品屬性
NTE
更換光電元件
否
1
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