NTE310P
Integrated Thyristor/Rectifier (ITR)
TV Horizontal Deflection & Trace Switch
Absolute Maximum Ratings:
Repetitive Peak Forward Off鈥揝tate Voltage (T
C
= +85擄C, Note 1), V
DRM
. . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Reverse Voltage (T
C
= +85擄C, Note 1), V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Mean On鈥揝tate Current (T
C
= +60擄C, 50Hz Sine Wave, Conduction Angle of 180擄), I
O
, I
T(AV)
Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A
RMS On鈥揝tate Current (T
C
= +60擄C, 50Hz Sine Wave, Conduction Angle of 180擄), I
F(RMS)
, I
T(RMS)
Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A
Surge Current (T
C
= +85擄C, One Full Cycle), I
TSM
, I
FSM
60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Rate of Change of On鈥揝tate Current (V
D
= 700V, I
GT
= 50mA, t
r
= 0.1碌s), di/dt . . . . . . . . . 200A/碌s
Peak Forward Gate Power (Negative Gate Bias = 鈥?0V, 10碌s max, Note 2), P
GM
. . . . . . . . . . 25W
Peak Reverse Gate Power (Negative Gate Bias = 鈥?0V, 10碌s max, Note 2), P
RGM
. . . . . . . . 25W
Operating Case Temperature Range, T
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +85擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5擄C/W
Lead Temperature (During Soldering, 1/8鈥?from case, 10sec max), T
L
. . . . . . . . . . . . . . . . . . +225擄C
Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively
biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the maxi-
mum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded.
Electrical Characteristics:
(T
C
= +25擄C 鈥淢aximum Ratings鈥?unless otherwise specified)
Parameter
Peak Forward Blocking Current
Instantaneuos Voltage
Rectifier
SCR
Peak Forward Voltage (Rectifier Only)
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
Symbol
I
DRM
V
F
V
T
V
FM
I
GT
V
GT
Test Conditions
V
D
= 700V, T
C
= +85擄C
I
F
= 10A
I
T
= 30A
I
FM
= 1A
Anode Voltage = 12V, R
L
= 30鈩?/div>
Anode Voltage = 12V, R
L
= 30鈩?/div>
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
0.5
1.35
1.75
8
15
1.8
Max Unit
1.5
1.7
3.0
13
40
4.0
mA
V
V
V
mA
V
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