NTE3096
Optoisolator
Low LED Drive NPN Transistor Output
Description:
The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor
in a 6鈥揕ead DIP type package. This device is designed for applications requiring low LED drive current,
high electrical isolation, small package size and low cost such as interfacing and coupling systems,
phase feedback controls, solid鈥搒tate relays and general purpose switching circuits.
Features:
D
High Transfer Ratio with Low LED Drive
D
High Electrical Isolation
D
Low Collector鈥揈mitter Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25擄C, unless otherwise specified)
Infrared Emitting Diode
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width 1碌sec, 2% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation (Negligible Power in Transistor), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate above 25擄C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/擄C
Phototransistor
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (Continuous), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (Negligible Power in Transistor), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25擄C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/擄C
Total Device
Power Dissipation (Negligible Power in Transistor), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25擄C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/擄C
Surge Isolation Voltage (60Hz, Peak AC, 5sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7500V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 10sec), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260擄C
1
2
