NTE3086
Optoisolator
Dual NPN Transistor Output
Description:
The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo-
transistor per channel. This device is constructed with a high voltage insulation, double molded pack-
aging process which offers 7.5KV withstand test capability.
Features:
D
Two isolated Channels per Package
D
7500V Withstand Test Voltage
D
CTR Minimum: 20%
Absolute Maximum Ratings:
Gallium Arsenide LED (Each Channel)
Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/擄C
Forward Current, I
F
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width 1碌s, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Phototransistor (Each Channel)
Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/擄C
Collector鈥揈mitter Breakdow Voltage, V
(BR)CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揃ase Breakdow Voltage, V
(BR)CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揅ollector Breakdow Voltage, V
(BR)ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Total Device
Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/擄C
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 10sec Max), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +250擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Gallium Arsenide LED
Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
V
F
V
R
I
R
I
F
= 20mA
I
R
= 10碌A(chǔ)
V
R
= 3V
V = 0, f = 1MHz
鈥?/div>
3
鈥?/div>
鈥?/div>
1.1
25
鈥?/div>
80
1.5
鈥?/div>
10
鈥?/div>
V
V
碌A(chǔ)
pF
Symbol
Test Conditions
Min
Typ
Max
Unit
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