The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo鈥?/div>
darlington in a 6鈥揕ead DIP type package.
Features:
D
High Sensitivity: 1mA on the Input will Sink a TTL gate
D
High Isolation: 3550VDC, 10
12
鈩?
0.5pF
Absolute Maximum Ratings:
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +100擄C
Lead Temperature (During Soldering, 10sec), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260擄C
Total Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Linearly to 100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/擄C
Input to Output Isolation Voltage (1sec), V
ISOL
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3550VDC
Input Diode
Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Peak Forward Current (1碌s pulse, 300pps), I
F
peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Output Darlington
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125mA
Electro鈥揙ptical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Capacitance
Resistance
Voltage Breakdown
Symbol
C
iso
R
iso
V
iso
Test Conditions
f = 1MHz
V = 500VDC
t = 1sec
Min
鈥?/div>
3550
Typ
0.5
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
Unit
pF
鈩?/div>
VDC
Isolation Between Emitter and Detector
10
11
10
12
NTE3083相關(guān)型號(hào)PDF文件下載
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