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NTE3049 Datasheet

  • NTE3049

  • Optoisolator Zero Crossing TRIAC Driver

  • 25.27KB

  • 2頁

  • NTE

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NTE3049
Optoisolator
Zero Crossing TRIAC Driver
Description:
The NTE3049 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic
silicon detector performing the function of a Zero Voltage crossing bilateral triac driver.
It is designed for use with a triac in the interface of logic systems to equipment powered from 115 Vac
lines, such as teletypewriters, CRTs, printers, motors, solenoids, and consumer appliances.
Features:
D
Simplifies Logic Control of 110VAC Power
D
Zero Voltage Crossing
D
High Breakdown Voltage: V
DRM
= 250V Min
D
High Isolation Voltage: V
ISO
= 7500V Min
D
dv/dt of 100V/碌s Typ
Absolute Maximum Ratings:
(T
A
= +25擄C, unless otherwise indicated)
Infrared LED
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/擄C
Output Driver
Off鈥揝tate Output Terminal Voltage, V
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Peak Repetitive Surge Current (PW = 100碌s, 120pps), I
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/擄C
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V
ISO
. . . . . . . . . . . 7500V
Total Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/擄C
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Ambient Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +85擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Lead Temperature (During Soldering, 10s), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260擄C
Note 1 Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating.

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