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NTE3045 Datasheet

  • NTE3045

  • Optoisolator Silicon NPN Darlington Phototransistor Output

  • 2頁

  • NTE

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NTE3045
Optoisolator
Silicon NPN Darlington Phototransistor Output
Description:
The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in
a 6鈥揕ead DIP type package designed for applications requiring electrical isolation, high breakdown
voltage, and high current transfer ratios. Characterized for use as telephone relay drivers but pro-
vides excellent performance in interfacing and coupling systems, phase and feedback controls, solid
state relays, and general purpose switching circuits.
Features:
D
High Sensitivity to Low Input Drive Current
D
High Collector鈥揈mitter Breakdown Voltage: V
(BR)CEO
= 80V (Min)
D
High Input鈥揙utput Isolation Guaranteed: V
ISO
= 7500V (Peak)
Absolute Maximum Ratings:
(T
A
= +25擄C, unless otherwise specified)
Input LED
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
LED Power Dissipation (T
A
= +25擄C with Negligible Power in Output Detector), P
D
. . . . . . 120mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/擄C
Output Detector
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揅ollector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Detector Power Dissipation (T
A
= +25擄C with Negligible Power in Input LED), P
D
. . . . . . . . 150mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/擄C
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V
ISO
. . . . . . . . . . . 7500V
Total Device Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/擄C
Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering for 10sec, 1/16鈥?from Case), T
L
. . . . . . . . . . . . . . . . . . +260擄C
Note 1. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pin1
and Pin2 are common, and Pin4, Pin5, and Pin6 are common.

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