NTE3041
Optoisolator
NPN Transistor Output
Description:
The NTE3041 is an optoisolator in a 6鈥揕ead DIP type package consisting of a gallium arsenide in-
frared emitting diode optically coupled to a monolithic silicon phototransistor detector.
Features:
D
High Current Transfer Ratio: 100% Min @ Spec Conditions
D
Guaranteed Switching Speeds
Applications:
D
General Purpose Switching Circuits
D
Interfacing and Coupling Systems of Different Potentials and Impedances
D
Regulation Feedback Circuits
D
Monitor & Detection Circuits
D
Solid State Relays
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Input LED
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
LED Power Dissipation (With Negligible Power in Output Detector), P
D
. . . . . . . . . . . . . . . . . 120mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/擄C
Output Transistor
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Detector Power Dissipation (With Negligible Power in Output Detector), P
D
. . . . . . . . . . . . . 150mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/擄C
Total Device
Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V
ISO
. . . . . . . . . . 7500V
Total Device Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/擄C
Operating Ambient Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?from case, 10sec), T
L
. . . . . . . . . . . . . . . . . . . . . +260擄C
Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1
and Pin2 are common, and Pin4, Pin5, and Pin6 are common.
1
2
3
