NTE3040
Optoisolator
NPN Transistor Output
Description:
The NTE3040 is a gallium arsenide, infrared emitting diode in a 6鈥揕ead DIP type package coupled
with a silicon phototransistor.
Absolute Maximum Ratings:
(T
A
= +25擄C, unless otherwise specified)
Infrared Emitting Diode
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate above 25擄C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6mW/擄C
Forward Current (Continuous), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Forward Current (Peak), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
(Pulse Width 1碌sec, 300pps)
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Phototransistor
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate above 25擄C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6mW/擄C
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter to Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (Continuous), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Device
Storage Temperature, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Operating Temperature, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +100擄C
Lead Soldering Temperature (10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260擄C
Surge Isolation Voltage (Input to Output)
(Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V
Electrical Characteristics:
(T
A
= +25擄C, unless otherwise specified)
Parameter
Infrared Emitting Diode
Forward Voltage
Reverse Current
Capacitance
V
F
I
R
C
J
I
F
= 10mA
V
R
= 3V
V = 0, f = 1MH
Z
鈥?/div>
鈥?/div>
鈥?/div>
1.1
鈥?/div>
50
1.5
10
鈥?/div>
V
mA
pf
Symbol
Test Conditions
Min
Typ
Max
Unit
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