NTE3029A
Infrared鈥揈mitting Diode
Description:
The NTE3029A 940nm LED is a multi鈥損urpose device designed for use in numerous applications.
This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long
lifetime.
Features:
D
Low Cost
D
Low Degradation
D
New Mold Technology Improves Performance under Variable Environmental Conditions
D
New Lens Design offers Improved Optical Performance
Applications:
D
Low Bit Rate Communication Systems
D
Keyboards
D
Coin Handlers
D
Paper Handlers
D
Touch Screens
D
Shaft Encoders
D
General Purpose Interruptive and Reflective
Event Sensors
Absolute Maximum Ratings:
Reverse Breakdown Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, I
F
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Device Power Dissipation (T
A
= +25擄C, Note 2), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 55擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/擄C
Ambient Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Lead Temperature (During Soldering, Note 3), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260擄C
Note 1. The
NTE3029A
is a
discontinued
device and has been replaced by
NTE3029B.
Note 2 Measured with device soldered into a typical printed circuit board.
Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should
be applied in order to prevent the case temperature from exceeding +100擄C.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Reverse Leakage Current
Forward Voltage
Temperature Coefficient of Forward Voltage
Capacitance
Symbol
I
R
V
F
鈭哣
F
C
V = 0V, f = 1MHz
Test Conditions
V
R
= 6V
I
F
= 50mA
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
0.05
1.3
鈥?.6
24
Max
100
1.5
鈥?/div>
50
Unit
碌A(chǔ)
V
mV/擄C
pF
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