NTE3028
Infrared Emitting Diode
PN Gallium Arsenide
Description:
The NTE3028 is designed for applications requiring high power output, low drive power, and very fast
response time. This device is used in industrial processing and control, light modulators, shaft or posi-
tion encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for
use with silicon detectors.
Features:
D
High Power Output
D
Infrared Emission
D
Low Drive Current
D
Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings:
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, I
F
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (PW = 100碌s, Duty Cycle = 2%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25擄C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.27mW/擄C
Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Printed circuit board mounting.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Reverse Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Total Capacitance
Symbol
I
R
V
(BR)R
V
F
C
T
V
R
= 3V
I
R
= 100碌A(chǔ)
I
F
= 50mA
V
R
= 0V, f = 1MHz
Test Conditions
Min
鈥?/div>
6
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