NTE300 (NPN) & NTE307 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Voltage
Symbol
Test Conditions
Min
50
40
5
鈥?/div>
鈥?/div>
55
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.7
Max
鈥?/div>
鈥?/div>
鈥?/div>
1
1
300
1
鈥?/div>
V
V
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
(BR)CBO
I
C
= 1mA, I
E
= 0
V
(BR)EBO
I
C
= 10mA, R
BE
=
鈭?/div>
V
(BR)EBO
I
E
= 1mA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
V
CB
= 25V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 500mA
I
C
= 1A, I
B
= 50mA
V
CE
= 4V, I
C
= 50mA
NTE300 產(chǎn)品屬性
NTE
置換半導體
否
1
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