NTE2975
MOSFET
N鈥揅hannel, Enhancement Mode
High Speed Switch
Features:
D
Advanced Process Technology
D
Ultra Low On鈥揝tate Resistance
D
Dynamic dv/dt Rating
D
+175擄C Operating Temperature
D
Fast Switching
D
Fully Avalanche Rated
Absolute Maximum Ratings:
Drain Current, I
D
Continuous (V
GS
= 10V)
T
C
= +25擄C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53A
T
C
= +100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37A
Pulse (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A
Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107W
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W/擄C
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵20V
Avalanche Current (Note 2), I
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Repetitive Avalanche Energy (Note 2), E
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11mJ
Single Pulse Avalanche Energy (Note 3, Note 4), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152mJ
Peak Diode Recovery (Note 5), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
L
. . . . . . . . . . . . . . . +300擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4擄C/W
Typical Thermal Resistance, Case鈥搕o鈥揝ink (Flat, greased surface), R
thCS
. . . . . . . . . . . . . 0.5擄C/W
Maximum Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . 62擄C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 39A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Starting T
J
= +25擄C, L = 389碌H, R
G
= 25鈩? I
AS
= 28A.
Note 4. This is a calculated value limited to T
J
= +175擄C.
Note 5. I
SD
1
2
3
