NTE2974
MOSFET
N鈥揅hannel, Enhancement Mode
High Speed Switch
Features:
D
Low On鈥揝tate Resistance: R
DS(on)
= 1.1鈩?Max (V
GS
= 10V, I
D
= 3A)
D
Low Input Capacitance: C
iss
= 1150pF Typ
D
High Avalanche Capability Ratings
D
Isolated TO220 Type Package
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Drain鈥搕o鈥揝ource Voltage, V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate鈥搕o鈥揝ource Voltage, V
GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵30V
Drain Current, I
D
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵6.0A
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵24A
Total Power Dissipation, P
T
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W
Single Avalanche Current (Note 2), I
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A
Single Avalanche Energy (Note 2), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mJ
Channel Temperature, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. PW
鈮?/div>
10碌s, Duty Cycle
鈮?/div>
1%.
Note 2. Starting T
ch
= +25擄C, R
G
= 25鈩? V
GS
= 20V
鈫?/div>
0.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Drain鈥搕o鈥揝ource On鈥揝tate Resistance
Gate鈥搕o鈥揝ource Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate鈥搕o鈥揝ource Leakage Current
Symbol
R
DS(on)
V
GS(off)
|y
fs
|
I
DSS
I
GSS
Test Conditions
V
GS
= 10V, I
D
= 3A
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, I
D
= 3A
V
DS
= 600V, V
GS
= 0
V
GS
=
鹵30V,
V
DS
= 0
Min
鈥?/div>
2.5
2.0
鈥?/div>
鈥?/div>
Typ
0.8
鈥?/div>
NTE2974 產(chǎn)品屬性
NTE
置換半導體
否
1
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