NTE295
Silicon NPN Transistor
RF Power Output, Driver
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector鈥揈mitter Voltage (R
BE
= 150鈩?, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation (T
A
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Collector Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Symbol
I
CBO
I
EBO
Test Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
Min
鈥?/div>
鈥?/div>
75
75
45
5
60
180
鈥?/div>
鈥?/div>
鈥?/div>
1.0
60
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
250
0.2
0.9
15
1.8
鈥?/div>
Max
1.0
1.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
320
鈥?/div>
0.6
1.2
25
鈥?/div>
鈥?/div>
V
V
pF
W
%
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
V
V
(BR)CBO
I
C
= 10碌A(chǔ), I
E
= 0
V
(BR)CER
I
C
= 1mA, R
BE
= 150鈩?/div>
V
(BR)CEO
I
C
= 1mA, R
BE
=
鈭?/div>
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
h
FE
f
T
V
CE(sat)
V
BE(sat)
C
ob
P
O
畏
V
CE
= 5V, I
C
= 500mA
V
CE
= 10V, I
C
= 50mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1MHz
V
CC
= 12V, f = 27MHz, P
i
= 35mW
Emitter鈥揃ase Breakdown Voltage
DC Current Gain
Current Gain Bandwidth Product
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Output Capacitance
Output Power
Collector Efficiency
NTE295 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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