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NTE2902 Datasheet

  • NTE2902

  • N-Channel Silicon Junction Field Effect Transistor

  • 55.55KB

  • 2頁

  • NTE

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NTE2902
N-Channel Silicon Junction
Field Effect Transistor
Description:
The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier
applications.
Absolute Maximum Ratings:
(Note 1)
Drain-Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate-Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Forward Gate Current, I
GF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
to +150擄C
Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress values (not normal operating conditions) and are not
valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
-25
-
-
-2.0
24
-
Typ
-
-
-
-
-
-
Max
-
-1.0
-1.0
-6.5
60
1.0
Unit
V
nA
渭A
V
mA
V
OFF Characteristics
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
V
(BR)GSS
I
G
= 1.0渭A, V
DS
= 0
I
GSS
V
GS(off)
I
DSS
V
GS(f)
V
GS
= 15V,
V
DS
= 0
T
A
= +25擄C
T
A
= +125擄C
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0, Note 2
V
DS
= 0, I
G
= 1mA
ON Characteristics
Zero-Gate Voltage Drain Current
Gate-Source Forward Voltage
Note 2. Pulse test: Pulse Width
鈮?/div>
300渭s, Duty Cycle
鈮?/div>
3%.

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