NTE274 (NPN) & NTE275 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low鈥揻requency switching and hammer driver
applications.
Features:
D
High DC Current Gain: h
FE
= 3000 Typ @ I
C
= 2A
D
Low Collector鈥揈mitter Saturation Voltage: V
CE(sat)
= 2V Max @ I
C
= 2A
D
Collector鈥揈mitter Sustaining Voltage: V
CEO(sus)
= 80V Min
D
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 50mA, I
B
= 0
I
CEO
I
CER
Emitter Cutoff Current
I
EBO
V
CE
= 40V, I
B
= 0
V
CE
= 80V, V
EB(off)
= 1.5V
V
CB
= 80V, V
EB(off)
= 1.5V, T
A
= +150擄C
V
BE
= 5V, I
C
= 0
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.5
0.5
5.0
2.0
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
NTE275 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細信息
1
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