NTE272 (NPN) & NTE273 (PNP)
Silicon Darlington Complementary
Power Amplifiers
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
D
High DC Current Gain:
h
FE
= 25,000 (Min) @ I
C
= 200mA
= 15,000 (Min) @ I
C
= 500mA
D
Collector鈥揈mitter Breakdown Voltage:
V
(BR)CES
= 40V @ I
C
= 500mA
D
Low Collector鈥揈mitter Saturation Voltage:
V
CE(sat)
= 1.5V @ I
C
= 1A
D
Monolithic Construction for High Reliability
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage (Note 2), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/擄C
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125擄C/W
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5擄C/W
Note 1.
NTE273
is a
discontinued
device and
no longer
available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
ments are identical. V
(BR)CES
is tested in lieu of V
(BR)CEO
in order to avoid errors caused
by noise pickup. The voltage measured during the V
(BR)CES
test is the V
(BR)CEO
of the output
transistor.
1
2
