NTE2716
Integrated Circuit
NMOS, 16K UV Erasable PROM
Description:
The NTE2716 is a 16,384鈥揵it (2048 x 8鈥揵it) Erasable and Electrically Reprogrammable PROM in a
24鈥揕ead DIP type package designed for system debug usage and similar applications requiring non-
volatile memory that could be reprogrammed periodically. The transparent lid on the package allows
the memory content to be erased with ultraviolet light.
The NTE2716 operates from a single power supply and has a static power down mode.
Features:
D
Single 5V Power Supply
D
Automatic Power鈥揇own Mode (Standby)
D
Organized as 2048 Bytes of 8Bits
D
TTL Compatible During Read and Program
D
Access Time: 350ns
D
Output Enable Active Level is User Selectable
Absolute Maximum Ratings:
(Note 1)
All Input or Output Voltages (with respect to V
SS
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 to 鈥?.3V
V
PP
Supply Voltage (with respect to V
SS
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 to 鈥?.3V
Temperature Under Bias (V
PP
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +80擄C
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0擄 to +70擄C
Storage Temperature Range. T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Note 1. Permanent device may occur if 鈥淎bsolute Maximum Ratings鈥?are exceeded. Functional op-
eration should be restricted to 鈥淩ecommended Operating Conditions鈥? Exposure to higher
than recommended voltages for extended periods of time could affect device reliability.
Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high鈥搃mpedance circuit.
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