The NTE2708 is an ultra鈥搗iolet light鈥揺rasable, electrically programmable read only memory. It has
8, 192 bits organized as 1024 words of 8鈥揵it length. This device is fabricated using N鈥揷hannel silicon鈥?/div>
gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (includ-
ing program data inputs) can be driven by Series 74 TTL circuits without the use of external pull鈥搖p
resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The
data outputs for the NTE2708 are three鈥搒tate for OR tying multiple devices on a common bus.
This EPROM is designed for high鈥揹ensity fixed memory applications where fast turn arounds and/or
program changes are required. This device is designed for operation from 0擄 to +70擄C and is supplied
in a 24鈥揕ead DIP package for insertion in mounting鈥揾ole rows on 600鈥搈il (15.2 mm) centers.
Features:
D
1024 X 8 Organization
D
All Inputs and Outputs Fully TTL Compatible
D
Static Operation (No Clocks, No Refresh)
D
Performance Ranges:
Max Access: 450ns
Min Cycle: 450ns
D
3鈥揝tate Outputs for OR鈥揟ies
D
8鈥揃it Output
D
Plug鈥揅ompatible Pin鈥揙uts Allowing Interchangeability
Absolute Maximum Ratings:
(T
A
= 0擄 to +70擄C, Note 1 unless otherwise specified)
Supply Voltage, V
CC
(Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.3 to +15V
Supply Voltage, V
DD
(Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.3 to +20V
Supply Voltage, V
SS
(Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.3 to +15V
All Input Voltage (except program) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.3 to +20V
Program Input (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.3 to +35V
Output Voltage (operating, with respect to V
SS
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥? to +7V
Operating free鈥揳ir temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0擄C to 70擄C
Storage temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄C to 125擄C
Note 1. Stresses beyond those listed under 鈥淎bsolute Maximum Ratings鈥?may cause permenant
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions beyond those indicated in the 鈥淩ecommended Operating
Conditions鈥?section of this specification is not implied. Exposure to absolute鈥搈aximum鈥?/div>
rated conditions for extended periods may affect device reliability.
Note 2. Under absolute maximum ratings, voltage values are with respect to the most鈥搉egative sup-
ply voltage, V
BB
(substrate), unless otherwise noted. Throughout the remainder of this data
sheet, voltage values are with respect to V
SS
.
1
2
3
4
