NTE268 (NPN) & NTE269 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202
type package designed for amplifier and driver applications where high gain is an essential require-
ment, low power lamp and relay drivers and power drivers for high鈥揷urrent applications such as volt-
age regulators.
Features:
D
Low Collector鈥揈mitter Saturation Voltage: V
CE(sat)
= 1.5V Max @ I
C
= 1.5A
D
TO202 Type Package: 2W Free Air Dissipation @ T
A
= +25擄C
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V
Colllector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Derate Above 25擄C (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/擄C
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75擄C/W
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5擄C/W
Note 1. The
NTE268
is a
discontinued
device and no longer available.
Note 2. Pulse Width
鈮?/div>
25ms, Duty Cycle
鈮?/div>
50%.
Note 3. The actual power dissipation capability of the TO202 type package is 2W @ T
A
= +25擄C.
1
2
