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NTE2662 Datasheet

  • NTE2662

  • Silicon NPN Transistor High Frequency, Low Noise RF

  • 2頁

  • NTE

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NTE2662
Silicon NPN Transistor
High Frequency, Low Noise RF
Description:
The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for os-
cillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high
immunity to pushing effects.
Features:
D
New Miniature Surface Mount Package
鈭?/div>
Small Transistor Footprint
鈭?/div>
1.0mm x 0.5mm x 0.5mm
鈭?/div>
Low Profile / 0.50mm Package Height
鈭?/div>
Flat Lead Style for Better RF Performance
D
Ideal for
鈮?/div>
3GHz Oscillators
D
Low Phase Noise
D
Low Pushing Factor
Absolute Maximum Ratings:
(T
A
= +25擄C, Note 1 unless otherwise specified)
Collector鈭抰o鈭払ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector鈭抰o鈭扙mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
Emitter鈭抰o鈭払ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (Note 2), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鈭?5擄
to +150擄C
Note 1. Operation in excess of any one of these parameters may result in permanent damage.
Note 2. With device mounted on 1.8cm
2
x 1.0mm glass epoxy board.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Gain Bandwidth
Insertion Power Gain
Symbol
f
T
|S
21E
|
Test Conditions
V
CE
= 1V, f = 2GHz
V
CE
= 1V, f = 2GHz,
Note 3
I
C
= 5mA
I
C
= 15mA
I
C
= 5mA
I
C
= 15mA
Min
3.0
5.0
3.0
4.5
Typ
4.5
6.5
4.0
5.5
Max
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Unit
GHz
GHz
dB
dB
Note 3. Pulsed measurement, Pulse Width
鈮?/div>
350渭s, Duty Cycle
鈮?/div>
2%.

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