NTE2661
Silicon NPN Transistor
Horizontal Deflection Output for HDTV
Features:
D
High Speed: t
f
= 0.15碌s Typ
D
High Breakdown Voltage: V
CBO
= 1700V
D
Low Saturation Voltage: V
CE(sat)
= 3V Max
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈭抰o鈭払ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector鈭抰o鈭扙mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter鈭抰o鈭払ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Power Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鈭?5擄
to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector鈭扙mitter Breakdown Voltage
DC Current Gain
Collector鈭扙mitter Saturation Voltage
Base鈭扙mitter Saturation Voltage
Transition Frequency
Collector Output capacitance
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
stg
t
f
Test Conditions
V
CB
= 1700V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 2A
V
CE
= 5V, I
C
= 11A
I
C
= 11A, I
B
= 2.75A
I
C
= 11A, I
B
= 2.75A
V
CE
= 10V, I
E
= 0.1A
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
(peak) = 10A, I
B1
= 1.8A,
f
H
= 64kHz
Min
鈭?/div>
鈭?/div>
600
10
4.5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
1.0
1.7
290
2.5
0.15
Max
1.0
10
鈭?/div>
30
8.5
3
1.3
鈭?/div>
鈭?/div>
4.0
0.3
V
V
MHz
pF
碌s
碌s
Unit
mA
碌A
V
鈭?/div>
V
(BR)CEO
I
C
= 10mA, I
B
= 0
NTE2661 產(chǎn)品屬性
NTE
置換半導體
否
Bipolar Transistor
1
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