NTE2643
Silicon NPN Transistor,
VHF/UHF Low Noise Amp
(Surface Mount)
Features:
D
Low Noise Figure, High Gain
D
NF = 1.1dB, |S
21e
|
2
= 13dB (f = 1GHz)
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Noise Figure
I
CBO
I
EBO
h
FE
C
ob
C
re
f
T
|S
21e
|
2
NF
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 10V, I
C
= 20mA
V
CB
= 10V, I
E
= 0, f = 1MHz, Note 1
V
CE
= 10V, I
C
= 20mA
V
CE
= 10V, I
C
= 20mA, f = 500MHz
V
CE
= 10V, I
C
= 20mA, f = 1GHz
V
CE
= 10V, I
C
= 5mA, f = 500MHz
V
CE
= 10V, I
C
= 5mA, f = 1GHz
鈥?/div>
鈥?/div>
80
鈥?/div>
鈥?/div>
5
鈥?/div>
9.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.1
7
18
13.0
1
1.1
1
1
240
1.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
碌A(chǔ)
碌A(chǔ)
pF
pF
GHz
dB
dB
dB
dB
0.65 1.05
Note 1. C
re
is measured by 3 terminal method with capacitance bridge.
NTE2643 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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