NTE2640
Silicon NPN Transistor
Color TV Horizontal Deflection Output
Features:
D
High Speed
D
High Collector鈥揈mitter Breakdown Voltage
D
High Reliability
D
On鈥揅hip Damper Diode
Absolute Maximum Ratings:
(T
A
+ 25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Dissipation, P
C
T
A
+ 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
T
C
+ 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
+ 25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CES
Emitter Cutoff Current
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
DC Current Gain
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
V
F
t
f
Test Conditions
V
CE
= 800V, I
E
= 0
V
CE
= 1500V, R
BE
= 0
V
EB
= 4V, I
C
= 0
I
C
= 3.15A, I
B
= 630mA
I
C
= 3.15A, I
B
= 630mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 3.5A
Diode Forward Voltage
Fall Time
I
EC
= 6A
V
CC
= 200V, V
BE
= 鈥?V, I
C
= 2A,
I
B1
= 400mA, I
B2
= 800mA,
Pulse Width = 20碌s, Duty Cycle
鈮?/div>
1%
Min
鈥?/div>
鈥?/div>
40
800
鈥?/div>
鈥?/div>
10
5
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
10
1.0
鈥?/div>
鈥?/div>
3.0
1.5
鈥?/div>
8
2
0.3
V
碌s
Unit
碌A(chǔ)
mA
mA
V
V
V
V
CEO(sus)
I
C
= 100mA, I
B
= 0
next
NTE2640 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細信息
1
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