NTE2633 (NPN) & NTE2634 (PNP)
Silicon Complementary Transistors
High Frequency Video Driver
Description:
The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126
type package designed for use in the buffer stage of the driver for high鈥搑esolution color graphics moni-
tors.
Features:
D
High Breakdown Voltage
D
Low Output Capacitance
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V
Collector鈥揈mitter Voltage (R
BE
= 100鈩?, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
DC Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Power Dissipation (T
S
鈮?/div>
+115擄C, Note 1), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Thermal Resistance, Junction鈥搕o鈥揝oldering Point (T
S
鈮?/div>
+115擄C, Note 1), R
thJS
. . . . . . . . . 20K/W
Note 1. T
S
is the temperature at the soldering point of the collector lead.
Electrical Characteristics:
(T
J
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Symbol
V
(BR)CBO
I
C
= 0.1mA
V
(BR)CEO
I
C
= 10mA
V
(BR)CER
I
C
= 10mA, R
BE
= 100鈩?/div>
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
I
E
= 0.1mA
I
CES
I
CBO
DC Current Gain
Transition Frequency
Collector鈥揃ase Capacitance
h
FE
f
T
C
cb
I
B
= 0, V
CE
= 50V
I
E
= 0, V
CB
= 50V
I
C
= 50mA, V
CE
= 10V, T
A
= +25擄C
I
C
= 50mA, V
CE
= 10V, f = 100MHz,
T
A
= +25擄C
I
C
= 0, V
CB
= 10V, f = 1MHz, T
A
= +25擄C
Test Conditions
Min
115
95
110
3
鈥?/div>
鈥?/div>
20
0.8
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
35
1.2
2.0
Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
20
鈥?/div>
鈥?/div>
鈥?/div>
GHz
pF
V
V
V
V
碌A(chǔ)
碌A(chǔ)
NTE2634 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE2634相關(guān)型號PDF文件下載
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