NTE2592
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
D
High Breakdown Voltage: V
(BR)CBO
= 2000V Min
D
Isolated TO220 Type Package
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Output Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 1800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 300碌A(chǔ)
V
CE
= 10V, I
C
= 300碌A(chǔ)
I
C
= 600碌A(chǔ), I
B
= 120碌A(chǔ)
I
C
= 600碌A(chǔ), I
B
= 120碌A(chǔ)
Min
鈥?/div>
鈥?/div>
10
鈥?/div>
鈥?/div>
鈥?/div>
2000
1800
5
鈥?/div>
鈥?/div>
6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.8
Typ
鈥?/div>
Max
1
1
60
鈥?/div>
5
2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
MHz
V
V
V
V
V
pF
Unit
碌A(chǔ)
碌A(chǔ)
V
(BR)CBO
I
C
= 100碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
C
ob
V
CB
= 100V, f = 1MHz
Collector鈥揈mitter Breakdown Voltage V
(BR)CEO
I
C
= 100碌A(chǔ), R
BE
=
鈭?/div>
next
NTE2592 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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