NTE2591
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D
High Breakdown Voltage, High Reliability
D
Low Output Capacitance
D
Wide ASO Range
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain鈥揃andwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
=1mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 100V, f = 1MHz
I
C
= 2mA, I
B
= 400碌A(chǔ)
I
C
=2mA, I
B
= 400碌A(chǔ)
Min
鈥?/div>
鈥?/div>
20
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2000
900
5
Typ
鈥?/div>
鈥?/div>
50
6
1.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
1.0
1.0
120
鈥?/div>
鈥?/div>
5
2
鈥?/div>
鈥?/div>
鈥?/div>
MHz
pF
V
V
V
V
V
Unit
碌A(chǔ)
碌A(chǔ)
Collector Base Breakdown Voltage V
(BR)CBO
I
C
= 1mA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
鈭?/div>
V
(BR)EBO
I
E
= 1mA, I
C
= 0
next
NTE2591相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power, Low Collector ...
NTE
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 75V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
Germanium PNP Transistor High Power, High Gain Amplifier
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor High Speed Switch, Core Driver
NTE
-
英文版
Silicon PNP Transistor Audio Power Output
NTE
-
英文版
Transistor; PNP; 80 V; 80 V; 7 V; 4 A (Continuous), 10 A (Pe...
NTE Electronics
-
英文版
POWER TRANSISTOR, PNP, -60V, TO-3; Transistor Polarity:PNP; ...
NTE Electronics
-
英文版
MOSFET Dual Gate, N-Channel for VHF TV Receivers Application...
NTE
-
英文版
Field Effect Transistor Dual Gate N-Channel MOSFET
NTE
-
英文版
MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain...
NTE Electronics
-
英文版
Silicon NPN Transistor Final RF Power Output for CB PO = 4W,...
NTE
-
英文版
Silicon NPN Transistor Linear Amplifier and High Speed Switc...
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Silicon NPN Transistor High Voltage Amp, Video Output
NTE
-
英文版
Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp
NTE
-
英文版
Silicon Controlled Rectifier (SCR) TV Deflection Circuit
NTE