NTE2585
Silicon NPN Transistor
High Voltage Amplifier
Features:
D
High Breakdown Voltage
D
Low Output Capacitance
D
High Reliability
D
Intended for High鈥揇ensity Mounting (Suitable for Sets Whose Height is Restricted)
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain鈥揃andwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 2mA
V
CB
= 100V, f = 1MHz
I
C
= 10mA, I
B
= 2mA
I
C
= 10mA, I
B
= 2mA
Min
鈥?/div>
鈥?/div>
20
10
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
800
800
7
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
40
1.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
1
1
50
鈥?/div>
鈥?/div>
鈥?/div>
1.0
1.5
鈥?/div>
鈥?/div>
鈥?/div>
MHz
pF
V
V
V
V
V
Unit
碌A
碌A
Collector Base Breakdown Voltage V
(BR)CBO
I
C
= 100碌A, I
E
= 0
Collector Emitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, R
BE
=
鈭?/div>
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
= 100碌A, I
C
= 0
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