NTE2579
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D
Fast Switching Speed
D
Low Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Rqange, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain鈥揃andwidth Product
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Fall Time
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 250V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 1A
V
CE
= 1V, I
C
= 5A
V
CE
= 10V, I
C
= 500mA
I
C
= 5A, I
B
= 500mA
I
C
= 5A, I
B
= 500mA
Min
鈥?/div>
鈥?/div>
15
10
10
鈥?/div>
鈥?/div>
400
200
6
鈥?/div>
Typ Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
鈥?/div>
50
鈥?/div>
0.8
1.5
鈥?/div>
鈥?/div>
鈥?/div>
0.3
MHz
V
V
V
V
V
碌s
碌A(chǔ)
碌A(chǔ)
V
(BR)CBO
I
C
= 1A, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
鈭?/div>
V
(BR)EBO
I
E
= 1mA, I
C
= 0
t
f
V
CC
= 50V, I
C
= 5A,
I
B1
= 鈥揑
B2
= 500mA,
Pulse Width = 20碌s,
Duty Cycle
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