NTE256
Silicon NPN Transistor
Darlington
w
/Damper Diode
Description:
The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an
integrated Base鈥揈mitter speed鈥搖p diode. This device is particularly suitable for use as an output
stage in high power, fast switching applications.
Absolute Maximum Ratings:
Collector鈥揃ase Voltagte (I
E
= 0), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector鈥揈mitter Voltage (I
B
= 0), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter鈥揃ase Voltage (I
C
= 0), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Peak (t
p
= 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Power Dissipation (T
C
鈮?/div>
+25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to + 175擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CEO
I
CEV
Test Conditions
V
CEO
= 400V, I
B
= 0
V
CE
= 600V, V
BE
= 1.5V, Note 1
V
CE
= 600V, V
BE
= 1.5V, T
C
= +100擄C,
Note 1
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
400
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
1
100
2
175
鈥?/div>
2.0
2.5
3.0
5.0
Unit
mA
碌A(chǔ)
mA
mA
V
V
V
V
V
Emitter Cutoff Current
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Saturation Voltage
I
EBO
V
CE(sat)
V
EB
= 2V, I
C
= 0, Note 1
I
C
= 10A, I
B
= 0.5A
I
C
= 18A, I
B
= 1.8A
I
C
= 22A, I
B
= 2.2A
I
C
= 28A, I
B
= 5.6A
V
CEO(sus)
I
C
= 100mA, Note 1
Note 1. Pulsed: Pulse Width = 300碌s, Duty Cycle = 1.5%.
NTE256 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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