NTE2557
Silicon NPN Transistor
Darlington, High Voltage Switch, Power Amp
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
Base Current, I
B
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Transistor Dissipation (T
C
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Transistion Frequency
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Turn鈥揙n Time
Storage Time
Fall Time
Symbol
I
CBO
I
CEO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
Test Conditions
V
CB
= 200V
V
CE
= 200V
V
EB
= 7V
V
CE
= 3V, I
C
= 10A
V
CE
= 10V, I
C
= 1.5A
I
C
= 10A, I
B
= 30mA
I
C
= 10A, I
B
= 30mA
I
B1
= I
B2
= 30mA,
I
C
= 10A, R
L
= 3鈩?
鈩?/div>
V
BB2
= 4V
Min
鈥?/div>
鈥?/div>
鈥?/div>
1500
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
0.1
0.1
5.0
30000
鈥?/div>
1.5
2.0
2
8
5
MHz
V
V
碌s
碌s
碌s
Unit
mA
mA
mA
NTE2557 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
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