NTE2545 (NPN) & NTE2546 (PNP)
Silicon Complementary Transistors
Darlington, High Speed Driver
Features:
D
High Speed Switching
D
Wide ASO Range
D
High Gain Bandwidth Product
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation, P
C
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain鈥揃andwidth Product
Collector Emitter Saturation Volt-
age
NTE2545
NTE2546
Base Emitter Saturation Voltage
Collector Emitter Breakdown Voltage
V
BE(sat)
I
C
= 2.5A, I
B
= 5mA
Collector Base Breakdown Voltage V
(BR)CBO
I
C
= 5mA, I
E
= 0
V
(BR)CEO
I
C
= 50mA, R
BE
=
鈭?/div>
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
Test Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 2.5A
V
CE
= 5V, I
C
= 2.5A
I
C
= 2.5A, I
B
= 5mA
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
70
60
Typ
鈥?/div>
鈥?/div>
200
0.9
1.0
鈥?/div>
鈥?/div>
鈥?/div>
Max
0.1
3.0
鈥?/div>
鈥?/div>
鈥?/div>
1.5
2.0
鈥?/div>
鈥?/div>
MHz
V
V
V
V
V
Unit
mA
mA
2000 5000
NTE2545 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE2545相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power, Low Collector ...
NTE
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 75V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
Germanium PNP Transistor High Power, High Gain Amplifier
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor High Speed Switch, Core Driver
NTE
-
英文版
Silicon PNP Transistor Audio Power Output
NTE
-
英文版
Transistor; PNP; 80 V; 80 V; 7 V; 4 A (Continuous), 10 A (Pe...
NTE Electronics
-
英文版
POWER TRANSISTOR, PNP, -60V, TO-3; Transistor Polarity:PNP; ...
NTE Electronics
-
英文版
MOSFET Dual Gate, N-Channel for VHF TV Receivers Application...
NTE
-
英文版
Field Effect Transistor Dual Gate N-Channel MOSFET
NTE
-
英文版
MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain...
NTE Electronics
-
英文版
Silicon NPN Transistor Final RF Power Output for CB PO = 4W,...
NTE
-
英文版
Silicon NPN Transistor Linear Amplifier and High Speed Switc...
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Silicon NPN Transistor High Voltage Amp, Video Output
NTE
-
英文版
Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp
NTE
-
英文版
Silicon Controlled Rectifier (SCR) TV Deflection Circuit
NTE
1
2
